12 DISC

Design and fabrication of Silicon / Compound Semiconductor based high power pulsed Laser Diode used for Proximity Fuze

Silicon or Compound Semiconductor based Pulsed Laser Diode used for proximity fuze have the following specifications: a) Material: GaAs / InGaAs b) Laser Diode: Pulsed Laser Diode c) Peak Power: 500 Watts d) Wavelength: 905nm e) Spectral BW: 7nm f) Beam Spread: 100 Degrees g) Number of elements: 2 X (4 X 3) h) Emitting Area: 800 x 300 um i) Max Pulse Duration: 150 ns

Challenges