12 DISC
Design and fabrication of Silicon / Compound Semiconductor based high power pulsed Laser Diode used for Proximity Fuze
Silicon or Compound Semiconductor based Pulsed Laser Diode used for proximity fuze have the following specifications:
a) Material: GaAs / InGaAs
b) Laser Diode: Pulsed Laser Diode
c) Peak Power: 500 Watts
d) Wavelength: 905nm
e) Spectral BW: 7nm
f) Beam Spread: 100 Degrees
g) Number of elements: 2 X (4 X 3)
h) Emitting Area: 800 x 300 um
i) Max Pulse Duration: 150 ns